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| 2SK3680-01 FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Repetitive or Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Symbol Ratings VDS 500 VDSX 500 ID 52 ID(puls] 208 VGS 30 IAS 52 IAR EAS dVDS/dt dV/dt PD 26 802.7 20 5 2.50 600 +150 -55 to +150 Unit V V A A V A Remarks VGS=-30V Operating and storage Tch temperature range Tstg *1 See to Avalanche Current Graph *2 See to Avalanche Energy Graph *3 IF < -ID, -di/dt=50A/s, VCC < BVDSS, Tch < 150C = = = Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Tch=25C *1 A Tch<150C = *1 mJ L=544H VCC=50V *2 kV/s VDS< 500V = kV/s *3 Ta=25C W Tc=25C C C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions VGS=0V ID= 250A ID= 250A VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=30V VDS=0V ID=26A VGS=10V ID=26A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=26A VGS=10V RGS=10 VCC=250V ID=52A VGS=10V L=544H Tch=25C IF=52A VGS=0V Tch=25C IF=52A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 500 3.0 Typ. Max. 5.0 25 250 100 0.11 Units V V A nA S pF 15 10 0.09 30 5350 8025 760 1140 42 63 80 120 103 155 190 285 49 74 114 171 36 54 40 60 1.00 0.83 19.0 ns nC 52 1.50 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.208 50.0 Units C/W C/W 1 2SK3680-01 Characteristics Allowable Power Dissipation PD=f(Tc) 800 FUJI POWER MOSFET Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 150 140 700 130 120 20V 10V 8V 600 110 100 500 90 7.5V ID [A] PD [W] 80 70 60 400 300 50 200 40 30 100 20 10 0 0 25 50 75 Tc [C] 100 125 150 0 0 4 8 12 VDS [V] 16 20 24 VGS=6.0V 6.5V Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C 100 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C 10 10 ID[A] 1 1 0.1 0.1 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 0.1 1 ID [A] 10 100 gfs [S] 0.3 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25 C VGS=6V 6.5V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=26A,VGS=10V 0.3 7.5V 0.2 0.2 RDS(on) [ ] 20V RDS(on) [ ] 8V 10V max. typ. 0.1 0.1 0.0 0 20 40 60 80 ID [A] 100 120 140 0.0 -50 -25 0 25 50 Tch [C] 75 100 125 150 2 2SK3680-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 7.0 6.5 6.0 5.5 5.0 max. Typical Gate Charge Characteristics VGS=f(Qg):ID=52A,Tch=25 C 14 12 Vcc= 100V 10 400V 8 250V VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 Tch [C] 100 125 150 0 0 20 40 2 4 min. VGS [V] 6 60 80 100 Qg [nC] 120 140 160 180 200 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 5 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C 1000 10 4 100 Ciss C [pF] 10 3 IF [A] Coss Crss 10 0 10 10 2 1 10 1 10 1 10 2 10 3 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 VSD [V] VDS [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Maximum Avalanche Energy vs. starting Tch I(AV)=f(starting Tch):Vcc=50V 70 60 td(off) 50 10 2 td(on) 40 Non-Repetitive (Single Pulse) t [ns] tf tr 1 IAV [A] 30 Repetitive 20 10 10 10 0 0 10 -1 10 0 10 ID [A] 1 10 2 0 25 50 75 100 125 150 175 200 starting Tch [C] 3 2SK3680-01 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=52A 2500 2000 IAS=21A 1500 EAV [mJ] IAS=32A 1000 IAS=52A 500 0 0 25 50 75 starting Tch [C] 100 125 150 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=50V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -2 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] Maxmum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 1 10 Zth(ch-c) [C/W] 0 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4 |
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